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Publicationer information ikon

Photoluminescence study of passivated surface quantum wells

Referentgranskad
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.
-1998Publicationer information ikon

In situ passivation of near-surface AIGaAs/GaAs quantum wells

Lipsanen, Harri; Sopanen, Markku; Taskinen, M.; Tulkki, J.; Ahopelto, Jouni
23rd International Conference on Physics of Semiconductors ICPS XXIII1996Publicationer information ikon

Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Referentgranskad
DOI
10.1109/ICIPRM.1996.492289
Lipsanen, Harri; Sopanen, Markku; Taskinen, M.; Tulkki, J.; Ahopelto, Jouni
8th International Conference on Indium Phosphide and Related Materials, IPRM 19961996Publicationer information ikon

Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

Referentgranskad
DOI
10.1109/ICIPRM.1998.712601
Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni; Sandman, J.; Feldman, J.
10th International Conference on Indium Phosphide and Related Materials, IPRM 19981998Publicationer information ikon

Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells

Referentgranskad
DOI
10.1063/1.2730024
Prunnila, Mika; Kivioja, J.M.; Ahopelto, Jouni
AIP Conference Proceedings2006Publicationer information ikon

Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

Referentgranskad
DOI
10.1063/1.1687988
Liu, H.F.; Peng, C.S.; Likonen, Jari; Jouhti, T.; Karirinne, S.; Konttinen, J.; Pessa, M.
Journal of Applied Physics2004Publicationer information ikon

Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells

Lipsanen, H.
-1994Publicationer information ikon

Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells

Referentgranskad
DOI
10.1109/ICIPRM.1998.712601
Lipsanen, H.; Sopanen, M.; Ahopelto, J.; Sandmann, J.; Feldmann, J.
IEEE CONFERENCE PROCEEDINGS1998Publicationer information ikon

Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

Referentgranskad
DOI
10.1143/JJAP.38.1133
Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni; Sandmann, J.; Feldmann, J.
Japanese Journal of Applied Physics1999Publicationer information ikon

Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

Referentgranskad
DOI
10.1063/1.115863
Lipsanen, Harri; Sopanen, Markku; Taskinen, M.; Tulkki, J.; Ahopelto, Jouni
Applied Physics Letters1996

Photoluminescence study of passivated surface quantum wells

Referentgranskad
1998

In situ passivation of near-surface AIGaAs/GaAs quantum wells

1996

Enhanced luminescence of near-surface quantum wells passivated in situ by InP

Referentgranskad
DOI
10.1109/ICIPRM.1996.492289
1996

Effect of InP passivation on carrier recombination in InGaAs/GaAs Surface Quantum Wells

Referentgranskad
DOI
10.1109/ICIPRM.1998.712601
1998

Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells

Referentgranskad
DOI
10.1063/1.2730024
2006

Influence of nitride and oxide cap layers upon the annealing of 1.3 μm GaInNAs/GaAs quantum wells

Referentgranskad
DOI
10.1063/1.1687988
2004

Photoreflectance and X-ray Diffraction Study of Semiconductor Heterostructures and Quantum Wells

1994

Effect of InP passivation on carrier recombination in In_(x)Ga_(1-x)As/GaAs surface quantum wells

Referentgranskad
DOI
10.1109/ICIPRM.1998.712601
1998

Effect of InP passivation on carrier recombination in InxGal-xAs/GaAs surface quantum wells

Referentgranskad
DOI
10.1143/JJAP.38.1133
1999

Enhanced optical properties of in situ passivated near-surface A1xGa1-xAs/GaAs quantum wells

Referentgranskad
DOI
10.1063/1.115863
1996